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JOURNAL OF MATERIALS SCIENCE L ETTERS 21, 2002, 33– 35 Formation of TiO F compounds in fluorine-implanted TiO 2−x x 2 T. YAMAKI, T. SUMITA, S. YAMAMOTO Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan E-mail: [email protected] Titanium dioxide (TiO ), a semiconductor with an opti- Helium ions of 2.0 MeV were generated by a 3 MV cal bandgap of 3 eV, i.e., a fundamental absorption edge single-ended accelerator and utilized for RBS-C mea- of 400 nm, is an attractive material for electrochemical surements. XPS spectra were recorded without Ar ion solar cells [1] and photocatalysts [2]. Chemical effects beam sputtering to obtain information on the chemical in TiO single crystals implanted with metal ions have states of the F ions at the surface. SIMS was used for been extensively studied for many years, using a variety probing the F depth profiles in the as-implanted and of ions, fluences, and energies [3, 4]. This is because subsequently annealed TiO crystals. doping of various transition metal cations is expected Fig. 1 shows the RBS-C results (in the random (a) and to improve the photoreactivity of TiO and
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Journal of Materials Science Letters – Springer Journals
Physical Chemistry Of Metals Darken And Gurry Pdf Viewer Download
Published: Oct 12, 2004
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